Abstract:High-frequency infrared carbon-sulfur (C/S) analyzer was used to analyze the silicon-carbide (SiC) content in SiC based refractory materials. By changing the experimental conditions, various factors affecting the analysis were examined, while the optimum experimental conditions were also established. The results were corrected by the standard samples: SiC, C-2 and the sample 1 for which the silicon carbide content was determined. The correction results were 81.74% and 81.67% respectively. The value determined by the chemical analysis was 81.70%, which shows that the results of the present experiment are accurate and credible.