郭莉莉,那 铎.电感耦合等离子体原子发射光谱(ICP-AES)法测定TB9钛合金中微量Si[J].中国无机分析化学,2018,8(1):50-52.
电感耦合等离子体原子发射光谱(ICP-AES)法测定TB9钛合金中微量Si
Determination of Trace Silicon in TB9 Titanium Alloy by Inductively Coupled Plasma-atomic Emission Spectrometry
投稿时间:2017-09-14  最后修改时间:2017-10-18
DOI:doi:10.3969/j.issn.2095-1035.2018.01.012
中文关键词:  TB9钛合金  微量Si  电感耦合等离子体原子发射光谱法
英文关键词:TB9 titanium alloy  trace Silicon  inductively coupled plasma-atomic emission spectrometry (ICP-AES)
基金项目:
     
作者单位
郭莉莉 中国科学院金属研究所,沈阳110016
那 铎 中国科学院金属研究所,沈阳110016
摘要点击次数: 113
全文下载次数: 
中文摘要:
      采用电感耦合等离子体原子发射光谱(ICP-AES)法对TB9钛合金中微量Si的测定进行了研究。总结了基体对较灵敏Si的8条分析线的光谱干扰,发现从Si 185. 067 nm到Si 288.158 nm均有不同基体元素的干扰,对微量Si的测定影响很大。经研究对比,选用背景相对低且信噪比高的Si 288.158 nm线,以试剂加定量V为空白来校正基体V的光谱叠加干扰,标准加入法测定。方法检出限0.04μg/mL,标准加入校准曲线的线性相关系数0.999 9。样品加标回收率为100%~105%,相对标准偏差(n=8)小于2.0%。方法简便可靠,可获得满意的分析结果。
英文摘要:
      The trace amount of silicon (Si) in TB9 titanium alloy was determined by inductively coupled plasma-atomic emission spectrometry (ICP-AES). For more sensitive eight spectral lines of Si in the range of 185.067 nm to Si 288.158 nm, strong spectral interference of different matrix elements were found that greatly affected the determination oftrace Si. Among eight primary lines,Si 288.158 nm was selected as the analytical linedue to comparatively lower background and higher signal-to-noise ratio. With thelinear correlation coefficient of 0.999 9, the detection limit of 0.04 μg/mL was achieved.The recovery rates were between 100.0%–105.0% and the relative standard deviation(n=8) was less than 2% showing good precision and accuracy of the Si quantitative analysis in TB9 titanium alloy.
查看全文  查看/发表评论  下载PDF阅读器
关闭