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辉光放电质谱法定量测定重掺晶体硅中替位碳含量
刘红†
(国标(北京)检验认证有限公司)
Quantitative determination of carbon substitution in heavily doped silicon by glow discharge mass spectrometry
Liu Hong
(GuobiaoBeijingTesting&Certification Co,Ltd)
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投稿时间:2020-07-03    修订日期:2020-07-15
中文摘要: 采用辉光放电质谱法测定单晶硅中替位碳含量,通过优化仪器工作条件,得到最佳放电参数。利用低温傅里叶变换红外光谱法对呈梯度的四个单晶硅片中替位碳含量进行赋值,将辉光放电质谱法测得替位碳强度与硅的离子束比与赋值结果做工作曲线,计算得到相对灵敏度因子(RSFcal)为1.19。在优化过的工作条件下,用辉光放电质谱法测未知样,用RSFcal进行计算,得到单晶硅中替位碳的定量分析结果,与二次离子质谱法(SIMS)结果进行对照,相对误差为3.7%,一致性较好。
Abstract:The substitution carbon content in monocrystalline silicon was determined by glow discharge mass spectrometry. The optimum discharge parameters were obtained by optimizing the working conditions of the instrument. The C content in four single crystal silicon wafers was evaluated by low temperature Fourier transform infrared spectrometer. The ion beam ratio and content of C and Si measured by glow discharge mass spectrometer were used as the working curve, and the accurate relative sensitivity factor was calculated to be 1.19. Under the optimized working conditions, the unknown sample was measured by glow discharge mass spectrometry, and the RSFcal was used to calculate the quantitative analysis results of the substituted carbon in monocrystalline silicon. Compared with the results of SIMS, the relative error was 3.7%, and the consistency was good.
文章编号:20200703001     中图分类号:    文献标志码:
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引用文本:
刘红†.辉光放电质谱法定量测定重掺晶体硅中替位碳含量[J].中国无机分析化学,2021,(3):-.
Liu Hong.Quantitative determination of carbon substitution in heavily doped silicon by glow discharge mass spectrometry[J].Chinese Journal of Inorganic Analytical Chemistry,2021,(3):-.

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