Determination of Impurity Elements in Semiconductor-grade Hydrofluoric Acid by High-resolution Inductively Coupled Plasma Mass Spectrometer (HR-ICP-MS) with Membrane Desolvation
Received:February 14, 2012  Revised:April 11, 2012
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DOI:doi:10.3969/j.issn.2095-1035.2012.02.0017
KeyWord:membrane desolvation;semiconductor-grade hydrofluoric acid; high-resolution inductively coupled plasma mass spectrometry (HR-ICP-MS);impurity element
  
AuthorInstitution
CHEN Liming 上海市计量测试技术研究院,上海
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Abstract:
      Trace metal impurities in semiconductor-grade hydrofluoric acid were determined by a high-resolution inductively coupled plasma mass spectrometer coupled with a membrane desolvating sample introduction system. Through the membrane desolvating sample introduction system, samples were directly analyzed without any sample pretreatment, which improve the speed and avoid the contamination that might be brought into the system in the sample pretreatment process. High resolution inductively coupled plasma mass spectrometry (HR-ICP-MS) can eliminate multi-molecule ion interferences, reduce detect limit and improve quantitative accuracy. The detection limits were in the range of 0.09 to 37.07 ng/L with the standard addition recoveries of 92.3% to 116.8 %. The experimental results show that the method is simple and gives reliable results, thus, suitable for rapid determination of trace elements in semiconductor-grade hydrofluoric acid.
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