Review of Application and Characterization Method of Doped ZnO
Received:April 02, 2021  Revised:April 02, 2021
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DOI:10.3969/j.issn.2095-1035.2022.03.011
KeyWord:ZnO; doping;application; characterization method
              
AuthorInstitution
ZHAO Ming 矿冶科技集团有限公司
WANG Junping 矿冶科技集团有限公司
WU Huimin 矿冶科技集团有限公司
WANG Hui 矿冶科技集团有限公司
Zhao Weiguang 矿冶科技集团有限公司
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Abstract:
      ZnO is one of the representative materials of the third-generation wide-bandgap semiconductors and is widely used in the optoelectronics field. Selective doping of ZnO can control and optimize its performance. This article reviews the application of doped ZnO in the fields of photocatalysis, solar cells and display screens, and focuses on the qualitative and quantitative characterization methods for doping elements, and systematically analyzes the advantages and disadvantages of each characterization methods, and finally looks forward to the development prospects of the doping technology and characterization methods of ZnO.
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