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| Application of GDMS for High Purity Materials |
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Received:November 21, 2018
Revised:January 03, 2019
Accepted:January 04, 2019
Published Online:May 27, 2019
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| DOI：doi:10.3969/j.issn.2095-1035.2019.02.007 |
| KeyWord:GDMS， high purity metal， high purity semiconductor |
| Author | Institution |
| Wang Shuang |
Jinzhou Product Quality Supervision and Inspection Institute/National Photovoltaic Material Quality Supervision and Inspection Center |
| Bai Shan |
Peking University Shenzhen Graduate School |
| Xu Ping |
Jinzhou Product Quality Supervision and Inspection Institute/National Photovoltaic Material Quality Supervision and Inspection Center |
| Zhou Yuanming |
Jinzhou Product Quality Supervision and Inspection Institute/National Photovoltaic Material Quality Supervision and Inspection Center |
| GUO Yachen |
National Quality Supervison and Inspection Center for Photovoltaic Material, Jinzhou Institute of Product Quality Supervision and Inspection, Jinzhou,Liaoning |
| Wang Shuying |
Jinzhou Product Quality Supervision and Inspection Institute/National Photovoltaic Material Quality Supervision and Inspection Center |
| Zhang Tengyue |
Jinzhou Product Quality Supervision and Inspection Institute |
| Liang Xuesong |
Jinzhou Product Quality Supervision and Inspection Institute |
| Hong Mei |
Peking University Shenzhen Graduate School |
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| Abstract: |
| High purity material is the basis of modern high technology development, and plays an important role in the fields of electronics, optics and optoelectronics. Glow discharge mass spectrometry (GDMS) as a solid sample direct analysis technique is an important method for high purity material analysis, and it has been widely used to trace and ultra-trace analysis impurities in high purity metal and high purity semiconductor materials. This paper reviewed the element analysis of high purity metal and high purity semiconductor material by GDMS, and the influences of working parameters, sputtering time and interference peak. It summarized that the trace impurity elements analysis of high purity titanium, cadmium, high purity silicon by GDMS. Results showed good discharge stability and typical elements relative standard deviation in the ideal range. |
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