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| Application of GDMS for High Purity Materials |
| Received:November 21, 2018 Revised:January 03, 2019 |
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| DOI：doi:10.3969/j.issn.2095-1035.2019.02.007 |
| KeyWord:GDMS， high purity metal， high purity semiconductor |
| Author | Institution |
| Wang Shuang |
锦州市产品质量监督检验所/国家光伏材料质量监督检验中心 |
| Bai Shan |
北京大学深圳研究生院 |
| Xu Ping |
锦州市产品质量监督检验所/国家光伏材料质量监督检验中心 |
| Zhou Yuanming |
锦州市产品质量监督检验所/国家光伏材料质量监督检验中心 |
| GUO Yachen |
锦州市产品质量监督检验所 国家光伏材料质量监督检验中心 |
| Wang Shuying |
锦州市产品质量监督检验所/国家光伏材料质量监督检验中心 |
| Zhang Tengyue |
锦州市产品质量监督检验所 |
| Liang Xuesong |
锦州市产品质量监督检验所 |
| Hong Mei |
北京大学深圳研究生院 |
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| Abstract: |
| High purity material is the basis of modern high technology development, and plays an important role in the fields of electronics, optics and optoelectronics. Glow discharge mass spectrometry (GDMS) as a solid sample direct analysis technique is an important method for high purity material analysis, and it has been widely used to trace and ultra-trace analysis impurities in high purity metal and high purity semiconductor materials. This paper reviewed the element analysis of high purity metal and high purity semiconductor material by GDMS, and the influences of working parameters, sputtering time and interference peak. It summarized that the trace impurity elements analysis of high purity titanium, cadmium, high purity silicon by GDMS. Results showed good discharge stability and typical elements relative standard deviation in the ideal range. |
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